Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD
Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 2
Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 3
    Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD
    Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 2
    Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 3
Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD
Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 2
Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD - view 3

Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD

2TB NVMe M.2 2280 SSD with PCIe 4.0 x4 / 5.0 x2 interface and up to 7,250MB/s read and 6,300MB/s write speeds

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Specs

Brand

Samsung

Model

990 EVO Plus (MZ-V9S2T0B)

Product Type

Internal NVMe Solid State Drive

Capacity

2TB

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Samsung 990 EVO Plus 2TB PCIe Gen4 x4 / Gen5 x2 NVMe M.2 SSD

The Samsung 990 EVO Plus 2TB is an NVMe M.2 2280 solid state drive with a dual-mode PCIe 4.0 x4 / PCIe 5.0 x2 interface. It combines Samsung's latest TLC V-NAND with a power-efficient, DRAM-less Host Memory Buffer design to reach sequential speeds up to 7,250MB/s read and 6,300MB/s write. Its speed and efficiency make it suitable for gaming PCs, laptops, content creation, and everyday multitasking.

Main Specs

  • 2TB NVMe 2.0 M.2 2280 SSD
  • Dual-mode PCIe 4.0 x4 / PCIe 5.0 x2 interface
  • Sequential read up to 7,250MB/s and write up to 6,300MB/s
  • Random read up to 1,000K IOPS and write up to 1,350K IOPS
  • Samsung V-NAND TLC flash memory
  • Host Memory Buffer (HMB) with improved power efficiency
  • 1,200TBW endurance rating
  • AES 256-bit hardware encryption
  • Ideal for gaming PCs, laptops, and content creation
Specs

Main Characteristics

Brand

Samsung

Model

990 EVO Plus (MZ-V9S2T0B)

Product Type

Internal NVMe Solid State Drive

Capacity

2TB

Form Factor

M.2 2280

Interface

PCIe 4.0 x4 / PCIe 5.0 x2, NVMe 2.0

Read Speed

Up to 7,250 MB/s (sequential)

Write Speed

Up to 6,300 MB/s (sequential)

Random Read/Write

Up to 1,000K / 1,350K IOPS

NAND

Samsung V-NAND TLC

Cache

DRAM-less, Host Memory Buffer (HMB)

Endurance (TBW)

1,200 TB

Encryption

AES 256-bit, TCG/Opal, IEEE1667

Software

Samsung Magician

Warranty

5-year limited

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